SSM9510GM Datasheet, PDF (1/8 Pages) Silicon Standard Corp. – N- and P-channel Enhancement-mode Power MOSFETs

SSM9510GM
N- and P-channel Enhancement-mode Power MOSFETs
Simple drive requirement
Lower gate charge
Fast switching characteristics
Pb-free; RoHS compliant.
DESCRIPTION
D2
D2
D1 ^D2
D1 ^D1
D1
SO-8
G2
S2^G2
G1 S2
S1
S1
G1
N-CH
P-CH
BV _DSS
R_DS(ON)
I_D
BV_DSS
R_DS(ON)
I_D
30V
28mΩ
6.9A
-30V
55mΩ
-5.3A
Advanced Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching, ruggedized
device design, low on-resistance and cost-effectiveness.
D1
D2
The SSM9510GM is in the SO-8 package, which is widely preferred for ^G1
G2
commercial and industrial surface mount applications. It is well suited
S1
S2
for low voltage applications requiring complementary N and P MOSFETs.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
V_GS
I_D @ T_A=25°C
I_D @ T_A=70°C
I_DM
P_D @ T_A=25°C
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
THERMAL DATA
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient³
Rating
N-channel P-channel
30
-30
±20
±20
6.9
-5.3
5.5
-4.2
30
-30
2.0
0.016
-55 to 150
-55 to 150
Max.
Value
62.5
Units
V
V
A
A
A
W
W/°C
°C
°C
Unit
°C/W
2/10/2005 Rev.2.01
www.SiliconStandard.com
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