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| SSM9408GH Datasheet, PDF (1/5 Pages) Silicon Standard Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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SSM9408GH
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
PRODUCT SUMMARY
Lower Gate Charge
Simple Drive Requirement
Fast Switching Characteristic
D
G
S
DESCRIPTION
The advanced power MOSFETs from Silicon Standard Corp.
provide the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(SSM9408GH) are available for low-profile applications.
Pb-free; RoHS-compliant
BVDSS
RDS(ON)
ID
G
D
S
G
DS
30V
10mΩ
57A
TO-252(H)
TO-251(J)
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VGS
ID@TC=25â
ID@TC=100â
IDM
PD@TC=25â
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
THERMAL DATA
Symbol
Rthj-c
Rthj-a
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Rating
30
±20
57
41
228
53.6
0.36
-55 to 175
-55 to 175
Units
V
V
A
A
A
W
W/â
â
â
Max.
Max.
Value
2.8
110
Units
â/W
â/W
02/21/2008 Rev.1.00
www.SiliconStandard.com
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