SSM90T03GP Datasheet, PDF (1/5 Pages) Silicon Standard Corp. – N-channel Enhancement-mode Power MOSFET

SSM90T03GP,S
N-channel Enhancement-mode Power MOSFET
Low gate-charge
D
Simple drive requirement
Fast switching
G
Pb-free, RoHS compliant.
S
DESCRIPTION
BV_DSS
R_DS(ON)
I_D
The SSM90T03GS is in a TO-263 package, which is widely used for
commercial and industrial surface mount applications. This device is
suitable for low voltage applications such as DC/DC converters.
The through-hole version, the SSM90T03GP in TO-220, is available for
vertical-mounting, where a small footprint is required on the board, and/or
an external heatsink is to be attached.
GD _S
ABSOLUTE MAXIMUM RATINGS
G
D
S
30V
4mΩ
75A
TO-263 (S)
TO-220 (P)
Symbol
V_DS
V_GS
I_D @ Tc=25°C
I_D @ Tc=100°C
I_DM
P_D @ Tc=25°C
E_AS
T_STG
T_J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V_GS = 4.5V
Continuous Drain Current, V_GS = 4.5V
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy³
Storage Temperature Range
Operating Junction Temperature Range
THERMAL DATA
Symbol
R_ΘJC
R_ΘJA
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Rating
30
±20
75
63
350
96
0.7
29
-55 to 150
-55 to 150
Value
1.3
62
Units
V
V
A
A
A
W
W/°C
mJ
°C
°C
Units
°C/W
°C/W
2/17/2005 Rev.2.3
www.SiliconStandard.com
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