SSM90T03GH Datasheet, PDF (1/5 Pages) Silicon Standard Corp. – N-channel Enhancement-mode Power MOSFET

SSM90T03GH,J
N-channel Enhancement-mode Power MOSFET
Low gate-charge
Simple drive requirement
Fast switching
Pb-free; RoHS compliant.
DESCRIPTION
D
G
S
BV_DSS
R _DS(ON)
I_D
30V
4mΩ
75A
The SSM90T03GH is in a TO-252 package, which is widely used for
commercial and industrial surface mount applications, and is well suited
for low voltage applications such as DC/DC converters. The through-hole
version, the SSM90T03GJ in TO-251, is available for low-footprint vertical
mounting. These devices are manufactured with an advanced process,
providing improved on-resistance and switching performance.
ABSOLUTE MAXIMUM RATINGS
G _{D S TO-252 (H)}
G
D
S
TO-251 (J)
Symbol
V_DS
V_GS
I_D @ T_C=25°C
I_D @ T_C=100°C
I_DM
P_D @ T_C=25°C
E_AS
T_STG
T_J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V_GS @ 4.5V
Continuous Drain Current, V_GS @ 4.5V
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy³
Storage Temperature Range
Operating Junction Temperature Range
THERMAL DATA
Symbol
Rthj-c
Rthj-a
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Rating
30
±20
75
63
350
96
0.7
29
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/°C
mJ
°C
°C
Max.
Max.
Value
1.3
110
Units
°C/W
°C/W
5/17/2005 Rev.2.4
www.SiliconStandard.com
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