SSM85T08GP Datasheet, PDF (1/5 Pages) Silicon Standard Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

SSM85T08GP
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
PRODUCT SUMMARY
Simple Drive Requirement
Low On-resistance
Fast Switching Characteristic
DESCRIPTION
D
G
S
BV_DSS
R_DS(ON)
I_D
The Advanced Power MOSFETs from Silicon Standard Corp.
provide the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(SSM85T08GP) are available for low-profile applications.
GD
S
80V
13mΩ
75A
TO-263(S)
Pb-free; RoHS-compliant
ABSOLUTE MAXIMUM RATINGS
Symbol
V_DS
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
E_AS
I_AR
T_STG
T_J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy³
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
THERMAL DATA
Symbol
Rthj-c
Rthj-a
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
G
D
S
Rating
80
±20
75
48
260
138
1.11
450
30
-55 to 150
-55 to 150
TO-220(P)
Units
V
V
A
A
A
W
W/℃
mJ
A
℃
℃
Max.
Max.
Value
0.9
62
Units
℃/W
℃/W
08/06/2007 Rev.1.00
www.SiliconStandard.com
1