SSM72T02GH Datasheet, PDF (1/5 Pages) Silicon Standard Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

SSM72T02GH
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
PRODUCT SUMMARY
D
Simple Drive Requirement
Low On-Resistance
G
Fast Switching Characteristic
S
BV_DSS
R_DS(ON)
I_D
25V
9mΩ
62A
DESCRIPTION
The advanced power MOSFETs from Silicon Standard Corp.
provide the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
GD
S
TO-252(H)
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. ^{The through-hole version}
(SSM72T02GH) are available for low-profile applications.
GD
S
TO-251(J)
Pb-free; RoHS-compliant
ABSOLUTE MAXIMUM RATINGS
Symbol
V_DS
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
E_AS
I_AR
T_STG
T_J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy³
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Rating
25
± 20
62
44
190
60
0.4
29
24
-55 to 175
-55 to 175
Units
V
V
A
A
A
W
W/℃
mJ
A
℃
℃
THERMAL DATA
Symbol
Rthj-c
Rthj-a
.
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Value
2.5
110
Units
℃/W
℃/W
02/21/2008 Rev.1.00
www.SiliconStandard.com
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