SSM7002EGU Datasheet, PDF (1/5 Pages) Silicon Standard Corp. – N-channel Enhancement-mode Power MOSFET

SSM7002EGU
N-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BV_DSS
R _DS(ON)
I_D
50V
3Ω
250mA
Pb-free; RoHS-compliant SOT-323
D
DESCRIPTION
The SSM7002EGU acheives fast switching performance
with low gate charge without a complex drive circuit. It
is suitable for low voltage applications such as small
converters and general load-switching circuits.
The SSM7002EGU is supplied in a RoHS-compliant
SOT-323 package, which is widely used for low-power
commercial and industrial surface mount applications
where a small footprint is required.
S
SOT-323 _G
ABSOLUTE MAXIMUM RATINGS
Symbol
V_DS
V_GS
I_D
ISD
I_DM
P_D
T_STG
T_J
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current ³, T _A = 25°C
Source-drain diode current
Pulsed drain current ^1,2
Total power dissipation ³, T_A = 25°C
T_A = 75°C
Storage temperature range
Operating junction temperature range
THERMAL CHARACTERISTICS
Symbol
R_ΘJA
Parameter
Maximum thermal resistance, junction-ambient³
Value
50
± 20
250
115
1.0
200
120
-55 to 150
-55 to 150
Value
625
Units
V
V
mA
mA
A
mW
mW
°C
°C
Units
°C/W
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.
2.Pulse width <300us, duty cycle <2%.
3.Mounted on FR4 board
6/26/2006 Rev.3.02
www.SiliconStandard.com
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