SSM6923O Datasheet, PDF (1/5 Pages) Silicon Standard Corp. – P-CHANNEL POWER MOSFET WITH SCHOTTKY DIODE

SSM6923O
P-CHANNEL POWER MOSFET WITH SCHOTTKY DIODE
Low on-resistance
Fast switching characteristics
Surface-mount package
A
A
A
K
TSSOP-8
G
S
S
D
Description
Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
P-channel MOSFET
BV_DSS
R_DS(ON) @ 4.5V
I_D
-20V
50mΩ
-3.5A
Schottky Diode
V_KA
V_f @ 0.5V
I_F
20V
1A
1.5A
D
A
G
S
Absolute Maximum Ratings
Symbol
V_DS
V_KA
V_GS
I_D @ T_A=25°C
I_D @ T_A=70°C
I_DM
I_F
I_FM
P_D @ T_A=25°C
Parameter
Drain-Source Voltage (MOSFET and Schottky)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
Continuous Drain Current³ (MOSFET)
Continuous Drain Current³ (MOSFET)
Pulsed Drain Current^1,2 (MOSFET)
Average Forward Current (Schottky)
Pulsed Forward Current (Schottky)
Total Power Dissipation (MOSFET)
Linear Derating Factor (MOSFET)
Total Power Dissipation (Schottky)
T_STG
T_J
Linear Derating Factor (Schottky)
Storage Temperature Range
Operating Junction Temperature Range
Rating
-20
20
± 12
- 3.5
- 2.8
- 30
1
25
1
1
-55 to 150
-55 to 125
K
Units
V
V
V
A
A
A
A
A
W
W/°C
W
W/ °C
°C
°C
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient (MOSFET) Max.
Thermal Resistance Junction-ambient (Schottky) Max.
Value
125
125
Unit
°C/W
°C/W
Rev.2.02 1/29/2004
www.SiliconStandard.com
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