SSM6618M Datasheet, PDF (1/6 Pages) Silicon Standard Corp. – N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

SSM6618M
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Low on-resistance
Fast switching speed
Surface-mount package
Description
D
D
D
D
SO-8
G
SS
S
Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
BV _DSS
R_DS(ON)
I_D
25V
30mΩ
7A
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D @ T_A=25°C
I_D @ T_A=70°C
I_DM
P_D @ T_A=25°C
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current^1,2
Total Power Dissipation
Linear Derating Factor
T_STG
T_J
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-amb
Thermal Resistance Junction-ambient
Rating
25
± 20
7
5.8
30
2.5
0.02
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/°C
°C
°C
Max.
Value
50
Unit
°CW
Rev.2.02 3/21/2004
www.SiliconStandard.com
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