SSM630GP Datasheet, PDF (1/7 Pages) Silicon Standard Corp. – N-channel Enhancement-mode Power MOSFET

SSM630GP
N-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BV_DSS
200V
R _DS(ON)
400mΩ
I_D
9A
Pb-free; RoHS-compliant TO-220
G
D
S
TO-220 (suffix P)
DESCRIPTION
The SSM630GP achieves fast switching performance
with low gate charge without a complex drive circuit. It is
suitable for low voltage applications such as DC/DC
converters and general load-switching circuits.
The SSM630GP is in TO-220 for through-hole mounting
where a small footprint is required on the board, and/or an
external heatsink is to be attached.
These devices are manufactured with an advanced process,
providing improved on-resistance and switching performance.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
V_GS
I_D
I_DM
P_D
E_AS
IAR
EAR
T_STG
T_J
Drain-source voltage
Gate-source voltage
Continuous drain current, T_C = 25°C
Pulsed drain current¹
T_C = 100°C
Total power dissipation, T_C = 25°C
Linear derating factor
Single pulse avalanche energy³
Avalanche current
Repetitive avalanche energy
Storage temperature range
Operating junction temperature range
THERMAL CHARACTERISTICS
Symbol
Parameter
R_ΘJC
R_ΘJA
Maximum thermal resistance, junction-case
Maximum thermal resistance, junction-ambient
Notes:
1. Pulse width must be limited to avoid exceeding the safe operating area.
2. Pulse width <300us, duty cycle <2%.
3. Starting Tj = 25°C, V_DD=50V , L=4.5mH , R_G=25Ω , I_AS=9A.
8/22/2006 Rev.3.1
www.SiliconStandard.com
Value
200
±30
9
5.7
36
74
0.59
240
9
7
-55 to 150
-55 to 150
Value
1.7
62
Units
V
V
A
A
A
W
W/°C
mJ
A
mJ
°C
°C
Units
°C/W
°C/W
1 of 7