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| SSM60T03GP Datasheet, PDF (1/5 Pages) Silicon Standard Corp. – N-channel Enhancement-mode Power MOSFET | |||
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SSM60T03GP,S
N-channel Enhancement-mode Power MOSFET
Low gate-charge
D
Simple drive requirement
Fast switching
G
Pb-free, RoHS compliant.
S
DESCRIPTION
BVDSS
R DS(ON)
ID
The SSM60T03GS is in a TO-263 package, which is widely used for
commercial and industrial surface-mount applications. This device is
G
DS
suitable for low-voltage applications such as DC/DC converters.
The through-hole version, the SSM60T03GP in TO-220, is available for
vertical-mounting, where a small footprint is required on the board, and/or
an external heatsink is to be attached.
These devices are manufactured with an advanced process, permitting
operation up to a maximum junction temperature of 175°C.
ABSOLUTE MAXIMUM RATINGS
G
D
S
Symbol
VDS
VGS
ID @ TC=25°C
ID @ TC=100°C
IDM
PD @ TC=25°C
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Rating
30
±20
45
32
120
44
0.352
30V
12mâ¦
45A
TO-263 (S)
TO-220(P)
Units
V
V
A
A
A
W
W/°C
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
THERMAL DATA
Symbol
RÎJC
RÎJA
Parameter
Maximum Thermal Resistance Junction-case
Maximum Thermal Resistance Junction-ambient
-55 to 175
-55 to 175
Value
3.4
62
°C
°C
Units
°C/W
°C/W
9/16/2005 Rev.3.1
www.SiliconStandard.com
1 of 5
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