SSM4957 Datasheet, PDF (1/5 Pages) Silicon Standard Corp. – DUAL P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

SSM4957(G)M
DUAL P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
Simple drive requirement
Lower gate charge
Fast switching characteristics
Description
D2
D2
D1
D1
SO-8
G2
S2
G1
S1
BV _DSS
R _DS(ON)
I_D
D1
-30V
24mΩ
-7.7A
D2
Advanced Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
G1
G2
ruggedized device design, low on-resistance and cost-effectiveness.
S1
S2
The SSM4957M is in the SO-8 package, which is widely preferred for
commercial and industrial surface mount applications, and is well suited
for low-voltage applications.
This device is available with Pb-free lead finish (second-level interconnect) as SSM4957GM.
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D @ T_A=25°C
I_D @ T_A=100°C
I_DM
P_D @ T_A=25°C
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
T_STG
T_J
Storage Temperature Range
Operating Junction Temperature Range
Rating
-30
± 20
-7.7
-6.1
-30
2
0.016
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/°C
°C
°C
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient³
Max.
Value
62.5
Unit
°C/W
10/21/2004 Rev.1.01
www.SiliconStandard.com
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