SSM4953M Datasheet, PDF (1/6 Pages) Silicon Standard Corp. – P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

SSM4953M
P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
Simple drive requirement
Low on-resistance
Fast switching
Description
D2
D2
D1
D1
SO-8
G2
S2
G1
S1
MOSFETs from Silicon Standard Corp. provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
G1
effectiveness.
The SO-8 package is widely preferred for commercial and
industrial surface mount applications and is well suited for low voltage
applications such as DC/DC converters.
BV_DSS
R_DS(ON)
I_D
D1
G2
S1
-30V
53m Ω
-5A
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I _D @ T_A=25°C
I _D @ T_A=70°C
I _DM
P_D @ T_A=25°C
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current^1,2
Total Power Dissipation
Linear Derating Factor
T_STG
T_J
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-amb
Thermal Resistance Junction-ambient
Rating
- 30
±20
-5
-4
-20
2
0.016
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/°C
°C
°C
Max.
Value
62.5
Unit
°C/W
Rev.2.02 5/23/2004
www.SiliconStandard.com
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