SSM4835M Datasheet, PDF (1/6 Pages) Silicon Standard Corp. – P-CHANNEL ENHANCEMENT MODE POWER MOSFET

SSM4835M
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple drive requirement
Low on-resistance
Fast switching
Description
D
D
D
D
SO-8
G
S
S
S
Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for commercial and industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
BV _DSS
R _DS(ON)
I_D
-30V
20mΩ
-8A
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current^1,2
Total Power Dissipation
Linear Derating Factor
T_STG
T_J
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-amb
Thermal Resistance Junction-ambient
Rating
-30
±25
-8
-6
-50
2.5
0.02
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Max.
Value
50
Unit
℃/W
Rev.2.01 6/26/2003
www.SiliconStandard.com
1 of 6