SSM4816SM Datasheet, PDF (1/9 Pages) Silicon Standard Corp. – DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE

SSM4816SM
DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE
Simple drive requirement
Suitable for DC-DC Converters
Fast switching performance
Description
S1/D2
S1/D2
S1/D2
D1
SO-8
MOSFET-1 BV _DSS
R _DS(ON)
I_D
G2
S2/A ^{MOSFET-2 BV} DSS
S2/A
G1
R _DS(ON)
I_D
Advanced Power MOSFETs from Silicon Standard provide
the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The SO-8 package is widely preferred for commercial and
industrial surface mount applications and is well suited for
low voltage applications such as DC/DC converters.
D1
G1
N-channel
MOSFET 1
30V
22mΩ
6.7A
30V
13mΩ
11.5A
S1/D2
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I _D @ T_A=25°C
I_D @ T_A=70°C
I_DM
P_D @ T_A=25°C
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
G2
N-channel
MOSFET 2
S2/A
Schottky Diode
Rating
MOSFET-1 MOSFET-2
30
30
±20
±20
6.7
11.5
5.3
9.2
30
40
1.4
2.4
0.01
0.02
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/°C
°C
°C
Thermal Data
Symbol
Parameter
Rthj-a (MOSFET-1)
Rthj-a (MOSFET-2)
Rthj-a (Schottky)
Thermal Resistance Junction-ambient³
Thermal Resistance Junction-ambient³
Thermal Resistance Junction-ambient³
Value
Typ.
Max.
70
90
42
53
52
60
Units
°C/W
°C/W
°C/W
Rev.1.01 4/16/2004
www.SiliconStandard.com
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