SSM4800AGM Datasheet, PDF (1/5 Pages) Silicon Standard Corp. – N-Channel Enhancement Mode Power Mosfet

SSM4800AGM
PRODUCT SUMMARY
Simple Drive Requirement
Low On-resistance
Fast Switching Characteristic
RoHS Compliant
DESCRIPTION
D
D
D
D
SO-8
N-Channel Enhancement Mode
PPower Mosfet
P
G
S
S
S
BV_DSS
R_DS(ON)
I_D
30V
18mΩ
9.4A
D
The Advanced Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G
S
Pb-free; RoHS-compliant
ABSOLUTE MAXIMUM RATINGS
Symbol
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
T_STG
T_J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
TH_TE_hR_eM_rmA_aL_lD_DA_aT_taA
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient³
Rating
30
±25
9.4
7.5
40
2.5
0.02
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Max.
Value
50
Unit
℃/W
02/09/2007 Rev.1.00
D
www.SiliconStandard.com
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