SSM4565M Datasheet, PDF (1/8 Pages) Silicon Standard Corp. – COMPLEMENTARY N- AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

SSM4565M/GM
COMPLEMENTARY N- AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
Simple drive requirement
Lower gate charge
Fast switching characteristic
Description
D2
D2
D1 ^D2
D1 ^D1
D1
SO-8
G2
S2^G2
G1 S2
S1
S1
G1
N-CH
P-CH
BV _DSS
R_DS(ON)
I_D
BV_DSS
R_DS(ON)
I_D
40V
25mΩ
7.6A
-40V
33mΩ
-6.5A
Advanced Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
D1
D2
The SSM4565M is in the SO-8 package, which is widely preferred for
G1
G2
commercial and industrial surface mount applications, and is well suited
for low voltage applications such as DC/DC converters.
S1
S2
This device is available with Pb-free lead finish (second-level interconnect) as SSM4565GM.
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D @ T_A=25°C
I_D @ T_A=70°C
I_DM
P_D @ T_A=25°C
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
N-channel P-channel
40
-40
±20
±20
7.6
-6.5
6
-5.2
30
-30
2.0
0.016
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/°C
°C
°C
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient³
Max.
Value
62.5
Unit
°C/W
12/10/2004 Rev.2.01
www.SiliconStandard.com
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