SSM4513M Datasheet, PDF (1/8 Pages) Silicon Standard Corp. – N AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

SSM4513M/GM
N AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
Simple drive requirement
Low on-resistance
Fast switching performance
Description
D2
D2
D1
D1
SO-8
G2
S2
G1
S1
N-CH
P-CH
BV _DSS
R _DS(ON)
I_D
BV_DSS
R_DS(ON)
I_D
35V
36mΩ
5.8A
-35V
68mΩ
-4.3A
Advanced Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching, ruggedized
device design, low on-resistance and cost-effectiveness.
D1
D2
G1
G2
The SSM4513M is in the SO-8 package, which is widely
preferred for commercial and industrial surface mount applications,
S1
S2
and is well-suited for most low voltage applications.
This device is available with Pb-free lead finish (second-level interconnect) as SSM4513GM.
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
N-channel P-channel
V_DS
V_GS
I_D @ T_A=25°C
I_D @ T_A=70°C
I_DM
P_D @ T_A=25°C
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
35
-35
±20
±20
5.8
-4.3
4.7
-3.4
20
-20
2.0
0.016
V
V
A
A
A
W
W/°C
T_STG
Storage Temperature Range
-55 to 150
°C
T_J
Operating Junction Temperature Range
-55 to 150
°C
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient³
Max.
Value
62.5
Unit
°C/W
10/12/2004 Rev.2.01
www.SiliconStandard.com
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