SSM4509GM Datasheet, PDF (1/8 Pages) Silicon Standard Corp. – N- AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

SSM4509GM
N- AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
Simple drive requirement
Low on-resistance
Fast switching characteristic
Description
D2
D2
D1 ^D2
D1 ^D1
D1
SO-8
G2
S2^G2
G1 S2
S1
S1
G1
N-CH
P-CH
BV _DSS
R_DS(ON)
I_D
BV_DSS
R_DS(ON)
I_D
30V
14mΩ
10A
-30V
20mΩ
-8.4A
Advanced Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
D1
D2
The SSM4509GM is in the SO-8 package, which is widely preferred for ^G1
G2
commercial and industrial surface mount applications, and is well suited
for applications such as low-voltage motor drives and inverters.
S1
S2
Pb-free lead finish (second-level interconnect)
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D @ T_A=25°C
I_D @ T_A=70°C
I_DM
P_D @ T_A=25°C
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
N-channel P-channel
30
-30
±20
±20
10
-8.4
7.9
-6.7
30
-30
2.0
0.016
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/°C
°C
°C
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient³
Max.
Value
62.5
Unit
°C/W
3/10/2005 Rev.1.01
www.SiliconStandard.com
1 of 8