SSM4507M Datasheet, PDF (1/7 Pages) Silicon Standard Corp. – COMPLEMENTARY N AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

SSM4507M
COMPLEMENTARY N AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
Simple drive requirement
Lower gate charge
Fast switching performance
Description
D2
D2 ^D2
D1 ^D2
D1 ^D1
D1
SO-8
G_G2₂
S2
G1 S2
S1 G1
S1
Advanced Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The SO-8 package is widely preferred for commercial and
industrial surface mount applications and is well suited for
low-voltage applications such as DC/DC converters.
N-Ch
P-Ch
BV _DSS
R _DS(ON)
I_D
BV _DSS
R _DS(ON)
I_D
D1
G1
G2
S1
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_A=25°C
I_D@T_A=70°C
I_DM
P_D@T_A=25°C
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient³
Rating
N-channel P-channel
30
-30
±20
±20
6
-4.2
4.8
-3.4
20
-20
2.0
0.016
-55 to 150
-55 to 150
Max.
Value
62.5
30V
36mΩ
6.0A
-30V
72mΩ
-4.2A
D2
S2
Units
V
V
A
A
A
W
W/°C
°C
°C
Unit
°C/W
Rev.1.01 4/06/2004
www.SiliconStandard.com
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