SSM4409GEM Datasheet, PDF (1/5 Pages) Silicon Standard Corp. – P-CHANNEL ENHANCEMENT MODE POWER MOSFET

PRODUCT SUMMARY
Simple Drive Requirement
Low On-resistance
Fast Switching Characteristic
RoHS Compliant
SSM4409GEM
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
D
D
D
SO-8
G
S
SS
BV_DSS
R_DS(ON)
I_D
-35V
7.5mΩ
-14.5A
DESCRIPTION
The Advanced Power MOSFETs from Silicon Standard Corp.
provide the designer with the best combination of fast switching,
G
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications such as
DC/DC converters.
Pb-free; RoHS-compliant
ABSOLUTE MAXIMUM RATINGS
Symbol
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
T_STG
T_J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^3a
Continuous Drain Current^3a
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
THERMAL DATA
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient^3a
Rating
-35
±20
-14.5
-12
-50
2.5
0.02
-55 to 150
-55 to 150
Value
Max
50
D
S
Units
V
V
A
A
A
W
W/℃
℃
℃
Unit
℃/W
08/04/2007 Rev.1.00
www.SiliconStandard.com
1