SSM4226M Datasheet, PDF (1/4 Pages) Silicon Storage Technology, Inc – DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

SSM4226M/GM
DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Low on-resistance
Simple drive requirement
High V_GS rating
Description
D2
D2
D1
D1
SO-8
G2
S2
G1
S1
Advanced Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
BV_DSS
R _DS(ON)
I_D
30V
18mΩ
8.2A
D1
D2
G1
G2
S1
S2
This device is available with Pb-free lead finish (second-level interconnect) as SSM4226GM.
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D @ T_A=25°C
I_D @ T_A=70°C
I_DM
P_D @ T_A=25°C
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
T_STG
T_J
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient³
Rating
30
± 20
8.2
6.7
30
2
0.016
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/ °C
°C
°C
Max.
Value
62.5
Unit
°C/W
8/06/2004 Rev.1.02
www.SiliconStandard.com
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