SSM3310GH Datasheet, PDF (1/7 Pages) Silicon Standard Corp. – P-channel Enhancement-mode Power MOSFET

SSM3310GH,J
P-channel Enhancement-mode Power MOSFET
2.5V low gate drive capability
D
Simple drive requirement
Fast switching
Pb-free; RoHS compliant.
G
S
DESCRIPTION
The SSM3310GH is in a TO-252 package, which is widely used for
commercial and industrial surface mount applications, and is well suited
for use in low voltage battery applications. The through-hole version,
the SSM3310GJ in TO-251, is available for low-footprint vertical
mounting. These devices are manufactured with an advanced process,
providing improved on-resistance and switching performance.
BV _DSS
R _DS(ON)
I_D
-20V
150mΩ
-10A
G _{D S TO-252 (H)}
G
D
S
TO-251 (J)
ABSOLUTE MAXIMUM RATINGS
Symbol
V_DS
V_GS
I_D @ T_C=25°C
I_D @ T_C=100°C
I_DM
P_D @ T_C=25°C
T_STG
T_J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
THERMAL DATA
Symbol
Rthj-c
Rthj-a
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Rating
-20
± 12
-10
-6.2
-24
25
0.2
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/°C
°C
°C
Max.
Max.
Value
5
110
Unit
°C/W
°C/W
2/16/2005 Rev.2.1
www.SiliconStandard.com
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