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SSM28G45EM Datasheet, PDF (1/4 Pages) Silicon Standard Corp. – N-CHANNEL INSULATED-GATE BIPOLAR TRANSISTOR
SSM28G45EM
N-CHANNEL INSULATED-GATE BIPOLAR TRANSISTOR
High input impedance
High peak current capability
3.3V gate drive
C
C
C
C
SO-8
G
E
E
E
Absolute Maximum Ratings
Symbol
Parameter
VCE
Collector-Emitter Voltage
VGE
Gate-Emitter Voltage
VGEP
Pulsed Gate-Emitter Voltage
ICP
PD @ TC=25°C1
Pulsed Collector Current
Maximum Power Dissipation
TSTG
Storage Temperature Range
TJ
Operating Junction Temperature Range
VCE
ICP
G
Rating
450
±6
±8
130
2.5
-55 to 150
-55 to 150
450V
130A
C
E
Units
V
V
V
A
W
°C
°C
Electrical Characteristics @ Tj=25oC (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
IGES
Gate-Emitter Leakage Current
VGE=± 6V, VCE=0V
-
-
10 µA
ICES
Collector-Emitter Leakage Current (Tj=25°C)
VCE=450V, VGE=0V
-
-
10 µA
VCE(sat)
Collector-Emitter Saturation Voltage VGE=3.3V, ICP=130A (Pulsed)
- 3.8 6
V
VGE(th)
Gate Threshold Voltage
VCE=VGE, IC=250µA
-
-
1
V
Qg
Total Gate Charge
IC=40A
-
74 120 nC
Qge
Gate-Emitter Charge
VCE=360V
-
8
- nC
Qgc
Gate-Collector Charge
VGE=4.5V
-
34
-
nC
td(on)
Turn-on Delay Time
VCC=200V
- 20
- ns
tr
Rise Time
td(off)
Turn-off Delay Time
IC=15A
RG=10Ω
- 100 -
ns
- 400 -
ns
tf
Fall Time
VGE=5V
-
3
-
µs
Cies
Input Capacitance
VGE=0V
- 3020 4830 pF
Coes
Output Capacitance
VCE=25V
- 220 - pF
Cres
RthJA1
Reverse Transfer Capacitance f=1.0MHz
Thermal Resistance Junction-Ambient
-
50
-
pF
-
-
50 °C/W
Notes:
1.Surface mounted on 1 in2 copper pad of FR4 board ; 125°C/W when mounted on min. copper pad.
9/21/2004 Rev.2.01
www.SiliconStandard.com
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