SSM2761P-A Datasheet, PDF (1/5 Pages) Silicon Standard Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

SSM2761P-A
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
PRODUCT SUMMARY
Lower On-resistance
Fast Switching Characteristic
Simple Drive Requirement
RoHS Compliant
DESCRIPTION
D
G
S
The TO-220 package is universally preferred for all commercial-
industrial applications. The device is suited for DC-DC ,AC-DC
converters for power applications.
BV_DSS
R_DS(ON)
I_D
650V
1Ω
10A
Pb-free; RoHS-compliant
G
D
S
TO-220
ABSOLUTE MAXIMUM RATINGS
Symbol
V_DS
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
I_AR
T_STG
T_J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
THERMAL DATA
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Rating
650
±30
10
4.4
18
104
0.8
10
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
A
℃
℃
Max.
Max.
Value
1.2
62
Units
℃/W
℃/W
05/25/2007 Rev.1.00
www.SiliconStandard.com
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