SSM25T03GH Datasheet, PDF (1/6 Pages) Silicon Standard Corp. – N-channel Enhancement-mode Power MOSFET

SSM25T03GH,J
N-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BV_DSS
R _DS(ON)
I_D
30V
35mΩ
20A
Pb-free; RoHS-compliant TO-251 (IPAK)
and TO-252 (DPAK)
G
D
S
TO-251 (suffix J)
G
D
S
TO-252 (suffix H)
DESCRIPTION
The SSM25T03 acheives fast switching performance
with low gate charge without a complex drive circuit. It is
suitable for low voltage applications such as DC/DC
converters and general load-switching circuits.
The SSM25T03GH is in a TO-252 package, which is
widely used for commercial and industrial surface-mount
applications.
The through-hole version, the SSM250T03GJ in TO-251,
is available for vertical mounting, where a small footprint
is required on the board, and/or an external heatsink is
to be attached.
These devices are manufactured with an advanced process,
providing improved on-resistance and switching performance.
ABSOLUTE MAXIMUM RATINGS
Symbol
V_DS
V_GS
I_D
I_DM
P_D
T_STG
T_J
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current, T_C = 25°C
Pulsed drain current¹
T_C = 100°C
Total power dissipation, T_C = 25°C
Linear derating factor
Storage temperature range
Operating junction temperature range
Value
30
±20
20
12
45
20
0.16
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/°C
°C
°C
THERMAL CHARACTERISTICS
Symbol
R_ΘJC
R_ΘJA
Parameter
Maximum thermal resistance, junction-case
Maximum thermal resistance, junction-ambient
Notes:
1.Pulse width must be limited to avoid exceeding the safe operating area.
2.Pulse width <300us, duty cycle <2%.
Value
6
110
Units
°C/\W
°C/W
10/2/2006 Rev.3.1
www.SiliconStandard.com
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