SSM2318GEN Datasheet, PDF (1/5 Pages) Silicon Standard Corp. – N-channel Enhancement-mode Power MOSFET

SSM2318GEN
N-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BV_DSS
R _DS(ON)
I_D
30V
720mΩ
1A
Pb-free; RoHS-compliant SOT-23-3
D
S
SOT-23-3 _G
DESCRIPTION
The SSM2318GEN acheives fast switching performance
with low gate charge without a complex drive circuit. It
is suitable for low voltage applications such as DC/DC
converters and general load-switching circuits.
The SSM2318GEN is supplied in an RoHS-compliant
SOT-23-3 package, which is widely used for lower
power commercial and industrial surface mount
applications.
The gate has internal ESD protection.
ABSOLUTE MAXIMUM RATINGS
Symbol
V_DS
V_GS
I_D
I_DM
P_D
T_STG
T_J
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current ³, T _A = 25°C
Pulsed drain current ^1,2
T_A = 70°C
Total power dissipation ³, T_A = 25°C
Linear derating factor
Storage temperature range
Operating junction temperature range
THERMAL CHARACTERISTICS
Symbol
R_ΘJA
Parameter
Maximum thermal resistance, junction-ambient³
Value
30
± 16
1
800
2
1.38
0.01
-55 to 150
-55 to 150
Units
V
V
A
mA
A
W
W/°C
°C
°C
Value
90
Units
°C/W
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.
2.Pulse width <300us, duty cycle <2%.
3.Mounted on a square inch of copper pad on FR4 board ; 270°C/W when mounted on the minimum pad area required for soldering.
6/16/2006 Rev.3.01
www.SiliconStandard.com
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