SSM2309GN Datasheet, PDF (1/5 Pages) Silicon Standard Corp. – P-channel Enhancement-mode Power MOSFET

SSM2309GN
P-channel Enhancement-mode Power MOSFET
Low gate-charge
Simple drive requirement
Fast switching
Pb-free; RoHS compliant.
DESCRIPTION
D
G
S
BV _DSS
R _DS(ON)
I_D
D
The SSM2309GN is in a SOT-23-3 package, which is widely used for lower
power commercial and industrial surface mount applications. It is well suited
for low voltage applications such as DC/DC converters and and general
switching applications.
SOT-23-3
-30V
75mΩ
-3.7A
S
G
ABSOLUTE MAXIMUM RATINGS
Symbol
V_DS
V_GS
I_D @ T_A=25°C
I_D @ T_A=70°C
I_DM
P_D @ T_A=25°C
T_STG
T_J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current^1,2
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
THERMAL DATA
Symbol
Rthj-a
Parameter
Thermal Resistance, Junction-ambient³
Rating
-30
± 20
-3.7
-3
-12
1.38
0.01
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/°C
°C
°C
Max.
Value
90
Unit
°C/W
2/16/2005 Rev.2.1
www.SiliconStandard.com
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