SSM2307N Datasheet, PDF (1/4 Pages) Silicon Standard Corp. – P-CHANNEL ENHANCEMENT MODE POWER MOSFET

SSM2307N
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple drive requirement
Small package outline
Surface-mount device
Description
D
S
SOT-23 _G
Advanced Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.
The SOT-23 package is widely preferred for commercial and
industrial surface mount applications and is well suited for low
voltage applications such as DC/DC converters.
BV _DSS
R _DS(ON)
I_D
-16V
60mΩ
- 4A
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D @ T_A=25°C
I_D @ T_A=70°C
I_DM
P_D @ T_A=25°C
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
T_STG
T_J
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient³
Rating
-16
±8
-4
-3.3
-12
1.38
0.01
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/°C
°C
°C
Max.
Value
90
Unit
°C/W
Rev.1.01 4/06/2004
www.SiliconStandard.com
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