SSM2307GN Datasheet, PDF (1/5 Pages) Silicon Standard Corp. – P-CHANNEL ENHANCEMENT MODE POWER MOSFET

SSM2307GN
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
PRODUCT SUMMARY
Simple Drive Requirement
Small Package Outline
Surface Mount Device
DESCRIPTION
D
S
SOT-23 _G
BV_DSS
R_DS(ON)
I_D
-16V
60mΩ
- 4A
The advanced power MOSFETs from Silicon Standard Corp.
provide the designer with the best combination of fast switching,
D
ruggedized device design, low on-resistance and cost-effectiveness.
The SOT-23 package is universally preferred for all commercial-
G
industrial surface mount applications and suited for low voltage
S
applications such as DC/DC converters.
Pb-free; RoHS-compliant
ABSOLUTE MAXIMUM RATINGS
Symbol
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
T_STG
T_J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
THERMAL DATA
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient³
Rating
-16
±8
-4
-3.3
-12
1.38
0.01
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Max.
Value
90
Unit
℃/W
08/02/2007 Rev.1.00
www.SiliconStandard.com
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