SSM2304AGN Datasheet, PDF (1/5 Pages) Silicon Standard Corp. – N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

SSM2304AGN
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Simple drive requirement
Lower gate charge
Fast switching characteristics
Description
D
S
SOT-23-3 _G
BV _DSS
R _DS(ON)
I_D
Advanced Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
The SSM2304AGN is in the SOT-23-3 package, which is widely preferred for
lower power commercial and industrial surface mount applications, and is
well suited for low voltage applications such as DC/DC converters and switches.
RoHS compliant.
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D @ T_A=25°C
I_D @ T_A=70°C
I_DM
P_D @ T_A=25°C
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
T_STG
T_J
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
± 20
2.5
2
10
1.38
0.01
-55 to 150
-55 to 150
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient³
Max.
Value
90
30V
117mΩ
2.5A
D
S
Units
V
V
A
A
A
W
W/°C
°C
°C
Unit
°C/W
3/21/2005 Rev.2.01
www.SiliconStandard.com
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