SSM2303N Datasheet, PDF (1/6 Pages) Silicon Standard Corp. – P-CHANNEL ENHANCEMENT-MODE POWER MOSFET

SSM2303N
P-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Simple drive requirement
Small package outline
D
Surface-mount device
Description
S
SOT-23 _G
Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.
BV_DSS
R _DS(ON)
I_D
-30V
240mΩ
- 1.7A
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D @ T_A=25°C
I_D @ T_A=70°C
I_DM
P_D @ T_A=25°C
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current^1,2
Total Power Dissipation
Linear Derating Factor
T_STG
T_J
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient³
Rating
- 30
± 20
-1.7
-1.4
-10
1.25
0.01
-55 to 150
-55 to 1 50
Units
V
V
A
A
A
W
W/°C
°C
°C
Max.
Value
100
Unit
°C/W
Rev.2.02 3/16/2004
www.SiliconStandard.com
1 of 6