SSM2302N Datasheet, PDF (1/6 Pages) Silicon Standard Corp. – N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

SSM2302N
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Capable of 2.5V gate drive
Small package outline
Surface-mount package
Description
D
S
SOT-23 _G
Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.
BV _DSS
R_DS(ON)
I_D
20V
85mΩ
2.8A
D
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D @ T_A=25°C
I_D @ T_A=70°C
I_DM
P_D @ T_A=25°C
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³, V_GS @ 4.5V
Continuous Current³, V_GS @ 4.5V
Pulsed Drain Current^1,2
Total Power Dissipation
Linear Derating Factor
T_STG
T_J
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient³
G
S
Rating
20
± 12
2.8
2.2
10
1.25
0.01
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/°C
°C
°C
Max.
Value
100
Unit
°C/W
Rev.2.02 3/12/2004
www.SiliconStandard.com
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