SSM20N03S Datasheet, PDF (1/6 Pages) Silicon Standard Corp. – N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

SSM20N03S,P
N-CHANNEL ENHANCEMENT-MODE
POWER MOSFET
Dynamic dv/dt rating
Repetitive-avalanche rated
Fast switching
Simple drive requirement
Description
D
G
S
BV_DSS
R _DS(ON)
I_D
30V
52m Ω
20A
Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for commercial and
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(SSM20N03P) is available for low-footprint applications.
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
T_STG
T_J
Storage Temperature Range
Operating Junction Temperature Range
G _{D S TO-263}
G
D
S
Rating
30
± 20
20
13
58
31
0.25
-55 to 150
-55 to 150
TO-220
Units
V
V
A
A
A
W
W/ ℃
℃
℃
Thermal Data
Symbol
Parameter
Rthj-case
Thermal Resistance Junction-case
Rthj-amb
Thermal Resistance Junction-ambient
Max.
Max.
Value
4.0
62
Unit
℃/W
℃/W
Rev.2.01 6/26/2003
www.SiliconStandard.com
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