SSM2030GM Datasheet, PDF (1/11 Pages) Silicon Standard Corp. – N- and P-channel Enhancement-mode Power MOSFETs

SSM2030GM
N- and P-channel Enhancement-mode Power MOSFETs
Simple drive requirement
Lower gate charge
Fast switching characteristics
Pb-free; RoHS compliant.
DESCRIPTION
D2
D2
D1 ^D2
D1 ^D1
D1
SO-8
G2
S2^G2
G1 S2
S1
S1
G1
N-CH
P-CH
BV _DSS
R_DS(ON)
I_D
BV_DSS
R_DS(ON)
I_D
Advanced Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching, ruggedized
device design, low on-resistance and cost-effectiveness.
The SSM2030GM is in an SO-8 package, which is widely preferred
G1
for commercial and industrial surface mount applications. This device is
suitable for low voltage applications requiring complementary N and P MOSFETs.
D1
G2
S1
20V
30mΩ
6A
-20V
50mΩ
-5A
D2
S2
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
V_GS
I _D @ T_A=25°C
I_D @ T_A=70°C
I_DM
P_D @ T_A=25°C
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current^1,2
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
THERMAL DATA
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient
Rating
N-channel P-channel
20
-20
±8
±8
+6
-5
+4.8
-4
+20
-20
2.0
0.016
-55 to 150
-55 to 150
Max.
Value
62.5
Units
V
V
A
A
A
W
W/°C
°C
°C
Unit
°C/W
2/10/2005 Rev.2.01
www.SiliconStandard.com
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