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| SSM1333GU Datasheet, PDF (1/5 Pages) Silicon Standard Corp. – P-channel Enhancement-mode Power MOSFET | |||
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SSM1333GU
P-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BVDSS
R DS(ON)
ID
-20V
600mâ¦
-550mA
Pb-free; RoHS-compliant SOT-323/SC-70
D
DESCRIPTION
The SSM1333GU acheives fast switching performance
with low gate charge without a complex drive circuit. It
is suitable for low voltage applications such as drivers,
high-side line and general load-switching circuits.
The SSM1333GU is supplied in an RoHS-compliant
SOT-323/SC-70 package, which is widely used for
low power commercial and industrial surface mount
applications.
SOT-323/SC-70
S
G
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VGS
ID
IDM
PD
TSTG
TJ
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current 3, T A = 25°C
Pulsed drain current 1,2
TA = 70°C
Total power dissipation 3, TA = 25°C
Linear derating factor
Storage temperature range
Operating junction temperature range
THERMAL CHARACTERISTICS
Symbol
RÎJA
Parameter
Maximum thermal resistance, junction-ambient3
Value
-20
± 12
-550
-440
-2.5
0.35
0.003
-55 to 150
-55 to 150
Value
360
Units
V
V
mA
mA
A
W
W/°C
°C
°C
Units
°C/W
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.
2.Pulse width <300us, duty cycle <2%.
3.Mounted on FR4 board, t < 10 sec.
11/26/2005 Rev.3.01
www.SiliconStandard.com
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