SSM09N90CGW Datasheet, PDF (1/5 Pages) Silicon Standard Corp. – N-channel Enhancement-mode Power MOSFET

SSM09N90CGW
N-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BV_DSS
R _DS(ON)
I_D
900V
1.4Ω
7.6A
Pb-free; RoHS-compliant TO-247
G
D
S
TO-247 (suffix W)
DESCRIPTION
The SSM09N90CGW acheives fast switching performance
with low gate charge without a complex drive circuit. It is
suitable for high voltage applications such as AC/DC
converters and offline power supplies.
The SSM09N90CGW is in a TO-247 (TO-3P) package,
which is widely used for commercial and industrial
applications, where the greater pin spacing is needed
to meet safety specifications. The through-hole package
is suitable for vertical mounting, where a small footprint
is required on the board, and/or an external heatsink is
to be attached.
ABSOLUTE MAXIMUM RATINGS
Symbol
V_DS
V_GS
I_D
I_DM
P_D
E_AS
I_AS
T_STG
T_J
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current, T_C = 25°C
Pulsed drain current¹
T_C = 100°C
Total power dissipation, T_C = 25°C
Linear derating factor
Single pulse avalanche energy³
Avalanche current
Storage temperature range
Operating junction temperature range
THERMAL CHARACTERISTICS
Symbol
R_ΘJC
R_ΘJA
Parameter
Maximum thermal resistance, junction-case
Maximum thermal resistance, junction-ambient
Notes:
1. Pulse width must be limited to avoid exceeding the safe operating area.
2. Pulse width <300us, duty cycle <2%.
3. Starting Tj=25°C, V_DD=50V , L=6.8mH , R_G=25Ω , I_AS=6A.
8/28/2006 Rev.3.1
www.SiliconStandard.com
Value
900
±30
7.6
4.8
25
208
1.6
120
6
-55 to 150
-55 to 150
Value
0.6
40
Units
V
V
A
A
A
W
W/°C
mJ
A
°C
°C
Units
°C/W
°C/W
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