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SSM03N70GP-H Datasheet, PDF (1/5 Pages) Silicon Standard Corp. – N-channel Enhancement-mode Power MOSFET
SSM03N70GP-H
N-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BVDSS
700V
R DS(ON)
4.4Ω
ID
2.5A
Pb-free; RoHS-compliant TO-220
G
D
S
TO-220 (suffix P)
DESCRIPTION
The SSM03N70GP-H achieves fast switching performance
with low gate charge without a complex drive circuit. It
is suitable for high voltage applications such as AC/DC
converters, SMPS and general off-line switching circuits.
The SSM03N70GP-H is in TO-220 for through-hole
mounting where a small footprint is required on the board,
and/or an external heatsink is to be attached.
These devices are manufactured with an advanced process,
providing improved on-resistance and switching performance.
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VGS
ID
IDM
PD
EAS
IAR
TSTG
TJ
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current, TC = 25°C
Pulsed drain current1
TC = 100°C
Total power dissipation, TC = 25°C
Linear derating factor
Single pulse avalanche energy3
Avalanche current
Storage temperature range
Operating junction temperature range
Value
700
±30
2.5
1.6
8
54
0.44
32
2.5
-55 to 150
-55 to 150
THERMAL CHARACTERISTICS
Symbol
Parameter
RΘJC
RΘJA
Maximum thermal resistance, junction-case
Maximum thermal resistance, junction-ambient
Notes:
1. Pulse width must be limited to avoid exceeding the safe operating area.
2. Pulse width <300us, duty cycle <2%.
3. Starting Tj = 25°C, VDD=50V , L=1mH , RG=25Ω , IAS= 2.5A.
9/29/2006 Rev.3.1
www.SiliconStandard.com
Value
2.3
62
Units
V
V
A
A
A
W
W/°C
mJ
A
°C
°C
Units
°C/W
°C/W
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