SSM03N70GH Datasheet, PDF (1/5 Pages) Silicon Standard Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

SSM03N70GH/GJ
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
PRODUCT SUMMARY
Repetitive Avalanche Rated
Fast Switching Speed
Simple Drive Requirement
D
G
S
BV_DSS
R_DS(ON)
I_D
600V
3.6Ω
3.3A
DESCRIPTION
The TO-252 package is universally preferred for all commercial-
Industrial surface mount applications and suited for AC/DC converters.
The through-hole version (SSM03N70GH/GJ) is available for low-profile
applications.
GD
S
TO-252(H)
RoHS-compliant
G
DS
TO-251(J)
ABSOLUTE MAXIMUM RATINGS
Symbol
V_DS
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
E_AS
I_AR
E_AR
T_STG
T_J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy²
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
THERMAL DATA
Symbol
Rthj-c
Rthj-a
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
±30
13.2
45
0.36
85
3.3
3.3
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
mJ
A
mJ
℃
℃
Max.
Max.
Value
2.8
110
Units
℃/W
℃/W
09/06/2007 Rev.1.00
www.SiliconStandard.com
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