MMBT3904LT1 Datasheet, PDF (1/2 Pages) Motorola, Inc – General Purpose Transistor

FEATURES
„ Power dissipation, P_CM:0.2W (Tamb=25℃)
„ Collector current, ICM: 0.2A
„ Collector-base voltage, V_(BR)CBO: 60V
„ Operating and storage junction temperature range:
T_J, T_stg: -55℃ to +150℃
„ SOT-23 plastic-encapsulate package
Device Marking: AM1
MMBT3904LT1
Transistors (NPN)
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Test Conditions
Collector-base breakdown voltage V(BR)CBO Ic= 100 µA, IE=0
Collector-emitter breakdown voltage V(BR)CEO VIc= 1 mA, IB=0
Min
60
Max
40
Unit
V
V
Emitter-base breakdown voltage
V(BR)EBO IE= 100µA, IC=0
6
V
Collector cut-off current
ICBO
VCB= 60V, IE=0
0.1 µA
Collector cut-off current
ICEO
VCE= 40V, IB=0
0.1 µA
Emitter cut-off current
IEBO
VEB= 5V, IC=0
0.1 µA
DC current gain
HFE(1)
VCE=10V, IC= 1mA
100
HFE(2)
VCE= 1V, IC= 50mA
60 300
Collector-emitter saturation voltage VCE(sat) IC=50mA, IB= 5mA
0.3 V
Base-emitter saturation voltage
VBE(sat) IC= 50mA, IB= 5mA
0.95 V
Transition frequency
fT
VCE= 20V, IC= 10mA
250
f=100MHz
MHz
Delay Time
td
VCC=3.0Vdc,VBE=0.5Vdc
35 nS
Rise Time
tr
IC=10mAdc,IB1=1.0mAdc
35 nS
Storage Time
ts
VCC=3.0Vdc, IC=10mAdc
200 nS
Fall Time
tf
IB1=IB2=1.0mAdc
50 nS
Note: Unless otherwise specified, these specifications apply over the operating ambient
temperature of 25℃.
12/16/2006 Rev. 1.00
www.SiliconStandard.com
1