MBR2535CT Datasheet, PDF (1/3 Pages) Motorola, Inc – SWITCHMODE™ Power Rectifiers

MBR/B25xxCT Series
25A Dual Schottky Rectifiers
PRODUCT SUMMARY
Voltage ratings available from 35 to 60 Volts
FEATURES
Plastic packages have Underwriters Laboratory Flammability
Classification 94V-0
Dual rectifier construction, positive center tap
Metal-silicon junction, majority carrier conduction
Low power loss, high efficiency
Guard-ring for overvoltage protection
For use in low voltage, high frequency inverters, free wheeling,
and polarity protection applications
MECHANICAL DATA
High temperature soldering guaranteed:
250°C for 10 seconds, 0.25" (6.35mm) from case
Case: JEDEC TO-220AB (MBR...) or ITO-220AB (MBRB...) molded plastic body - for dimensions, see page 3
Terminals: Matte-Sn plated leads, solderable per MIL-STD-750, method 2026
Polarity: As marked
Mounting Position: Any
Mounting Torque: 10 in-lbs maximum
Weight: 0.08 ounce, 2.24 grams
Pb-free; RoHS-compliant
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Parameter
Symbol
MBR2535CT MBR2545CT
MBRB2535CT MBRB2545CT
MBR2550CT MBR2560CT
MBRB2550CT MBRB2560CT
Units
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward
Total device
rectified current at T_C=130°C
Per leg
Peak repetitive forward current per leg at (rated V , sq.
R
wave 20kHz) at T_C=130^oC
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method) per leg
Peak repetitive reverse surge current per leg at t_p =
2.0us, 1KHz
Voltage rate of change (rated V )
R
Maximum instantaneous forward voltage per leg (Note 1)
at I _F=12.5A, T_c=25°C
at IF=12.5A, Tc=125°C
at I F=25A, Tc=25° C
at I_F=25A, Tc=125°C
Maximum reverse current at
rated DC blocking voltage
per leg (Note 1)
T_C=25^oC
T_C=125^o C
Thermal resistance from junction to case per leg
V_RRM
V_RWM
V_DC
I_F(AV)
I_FRM
I_FSM
I_RRM
dv/dt
V_F
I
R
R_{θ J C}
35
45
50
60
35
45
50
60
35
45
50
60
25
12.5
30
150
1.0
0.5
10,000
-
0.75
-
0.65
0.82
-
0.73
-
0.2
1.0
40
50
1.5
Volts
Volts
Volts
Amps
Amps
Amps
Amps
V /us
Volt
mA
°C/W
Operating junction temperature range
T_J
Storage temperature range
T_{S TG}
Notes: 1. Pulse test: 300us pulse width, 1% duty cycle
-55 to +150
-55 to +150
12/03/2006 Rev.4.01
www.SiliconStandard.com
o_C
o_C
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