MBR1030CT Datasheet, PDF (1/2 Pages) Diodes Incorporated – 10A SCHOTTKY BARRIER RECTIFIER

MBR1030CT-MBR1060CT
Schottky Barrier Recitifier
PRODUCT SUMMARY
TO-220 Plastic-Encapsulate Transistors
FEATURES
Scottky Barrier Chip
Guard Ring Die Construction for Transient Protection
Low Power Loss, High Efficiency
Very low forward voltage drop
High Surge Capability
High Current Capability and Low Forward Voltage Drop
For use in low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications
TO-220
1. ANODE
2. CATHODE
3. ANODE
123
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Pb-free; RoHS-compliant
2
ELECTRICAL CHARACTERISTICS
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( Tamb = 25^oC unless otherwise specified )
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
PMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@ TC=105℃
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load
(JEDEC Method)
Repetitive Peak Reverse Surge Current
@ t≤ 2.0µs
Forward Voltage Drop
@ IF=5.0A, TC=125℃
@ IF=5.0A, TC= 25℃
@ IF=10A, TC= 25℃
Peak Reverse Current
@ TC= 25℃
at Rated DC Blocking Voltage @ TC=125℃
Typical Junction Capacitance (Note 2)
Symbol
MBR MBR MBR MBR MBR MBR
1030CT 1035CT 1040CT 1045CT 1050CT 1060CT
Unit
VRRM
VRWM
30
VR
35
40
45
50
60
V
VR(RMS)
21
24.5 28
31.5 35
42
V
IO
10
A
IFSM
125
A
IRRM
1.0
A
0.57
0.70
VFM
0.70
0.84
0.80
V
0.95
0.1
IRM
mA
15
Cj
150
pF
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
℃
Notes: 1. Thermal resistance junction to case mounted heat sink.
2. Measured at 1.OMHz and applied reverse voltage of 4.0V DC.
01/29/2007 Rev.1.00
www.SiliconStandard.com
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