BAV99 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed double diode

BAV99
Surface-mount Dual Switching Diodes
Voltage range 75 Volts
Power Dissipation 350 mWatts
FEATURES
Fast switching speed
Surface mount package ideally suited for
automatic insertion
For general purpose switching applications
High conductance
MECHANICAL DATA
Case: SOT-23, Molded plastic
Terminals: Matte tin plating
Polarity: See diagram
Marking: JE
Weight: 0.008 gram (approx.)
Pb-free lead finish (second-level interconnect).
0.020(0.51)
0.015(0.37)
SOT-23
0.055(1.40) 0.098(2.50)
0.047(1.19) 0.083(2.10)
0.080(2.05)
0.070(1.78)
0.024(0.61)
0.018(0.45)
0.120(3.05)
0.104(2.65)
0.041(1.05)
0.047(0.89)
0.043(1.10)
0.035(0.89)
0.006(0.15)
0.001(0.013)
0.024(0.61)
0.018(0.45)
0.007(0.178)
0.003(0.076)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
BAV99
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Average Rectifier Output Current (Note 1)
Non-Repetitive Peak Forward Surge Current
@ t=1.0uS
@ t=1.0S
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air
(Note 1)
Operating and Storage Temperature Range
VRM
VRRM
VRWM
VR
VR(RMS)
IFM
Io
IFSM
Pd
Rthja
T_J, T_STG
100
75
53
300
150
2.0
1.0
350
357
-65 to + 150
Units
V
V
V
mA
mA
A
mW
°C/W
°C
Parameter
Symbol
Min
Max
Forward Voltage
IF=1.0mA
IF= 10mA
IF = 50mA
VF
IF=150mA
0.715
-
0.855
1.0
1.25
Peak Reverse Current
VR=75V
VR=75V, Tj=150°C
VR=25V, TJ=150°C
IR
VR=20V
2.5
-
50
30
25
Junction Capacitance VR=0, f=1.0MHz
Cj
-
2.0
Reverse Recovery Time (Note 2)
trr
-
4.0
Notes: 1. Valid provided that terminals are kept at ambient temperature.
2. Reverse recovery test conditions: IF=IR=10mA, Irr=0.1 x IR, RL=100Ω
Units
V
uA
nA
pF
ns
8/26/2004 Rev.1.01
www.SiliconStandard.com
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