BAS516 Datasheet, PDF (1/3 Pages) NXP Semiconductors – High-speed diode

BAS516
SWITCHING DIODES
PRODUCT SUMMARY
SOD-523 Plastic-Encapsulate Diodes
FEATURES
Small surface mounting type
High switching speed
Pb-free; RoHS-compliant
SOD-523
+
-
MARKING: 61
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Single Diode @T_A=25 ^oC
Parameter
Symbol
Limits
Unit
DC reverse voltage
V_R
75
V
Mean rectifying current
I_O
250
mA
Peak forward surge current
I_FSM
0.5
A
Junction temperature
T_j
150
℃
Storage temperature
T_stg
-65~+150
℃
ELECTRICAL RATINGS @T_A=25 ^oC
Parameter
Symbol Min. Typ. Max. Unit
Forward voltage
Reverse current
0.715
0.855
V_F
V
1
1.25
0.03
I_R
μA
1
Capacitance between terminals
C_T
1
pF
Reverse recovery time
t_rr
4
ns
Conditions
I_F=1mA
I_F=10mA
I_F=50mA
I_F=150mA
V_R=25V
V_R=75V
V_R=0, f=1MHZ
I_F=10mA, R_L=100Ω
08/03/2007 Rev.1.00
www.SiliconStandard.com
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