S29GL032A_07 Datasheet, PDF (78/95 Pages) SPANSION – 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology

Data Sheet
Table 16.7 Erase and Program Operations-S29GL016A Only
Parameter
Speed Options
JEDEC
Std.
Description
90
10
Unit
t_AVAV
t_WC
Write Cycle Time (Note 1)
Min
90
100
ns
t_AVWL
t_AS
Address Setup Time
Min
0
ns
t_ASO
Address Setup Time to OE# low during toggle bit polling
Min
15
ns
t_WLAX
t_AH
Address Hold Time
Min
45
ns
t_AHT
Address Hold Time From CE# or OE# high during toggle bit
polling
Min
0
ns
t_DVWH
t_DS
Data Setup Time
Min
35
ns
t_WHDX
t_DH
Data Hold Time
Min
0
ns
t_CEPH CE# High during toggle bit polling
Min
20
ns
t_OEPH OE# High during toggle bit polling
Min
20
ns
t_GHWL
t_GHWL Read Recovery Time Before Write (OE# High to WE# Low)
Min
0
ns
t_ELWL
t_CS
CE# Setup Time
Min
0
ns
t_WHEH
t_CH
CE# Hold Time
Min
0
ns
t_WLWH
t_WP
Write Pulse Width
Min
35
ns
t_WHDL
t_WPH
Write Pulse Width High
Min
30
ns
Write Buffer Program Operation (Note 2, 3)
Typ
240
t_WHWH1
t_WHWH1 Single Word Program Operation (Note 2)
Typ
60
µs
Accelerated Single Word Program Operation (Note 2)
Typ
54
t_WHWH2
t_WHWH2
t_VHH
t_VCS
t_BUSY
t_POLL
Sector Erase Operation (Note 2)
V_HH Rise and Fall Time (Note 1)
V_CC Setup Time (Note 1)
WE# High to RY/BY# Low
Program Valid before Status Polling
Typ
0.5
sec
Min
250
ns
Min
50
µs
Max
90
100
ns
Max
4
µs
Notes
1. Not 100% tested.
2. See Erase And Programming Performance on page 87 for more information
3. For 1–16 words/1–32 bytes programmed.
4. Effective write buffer specification is based upon a 16-word/32-byte write buffer operation.
5. If a program suspend command is issued within t_POLL, the device requires t_POLL before reading status data, once programming resumes
(that is, the program resume command is written). If the suspend command was issued after t_POLL, status data is available immediately
after programming resumes. See Figure 16.5 on page 79
78
S29GL-A
S29GL-A_00_A11 September 10, 2007