S29WS-NL Datasheet, PDF (69/99 Pages) SPANSION – 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY

Advance Information
11.7 DC Characteristics (CMOS Compatible)
Parameter
Description (Notes)
Test Conditions (Notes 1, 2, 9)
I_LI
Input Load Current
I_LO
Output Leakage Current (3)
V_IN = V_SS to V_CC, V_CC = V_CCmax
V_OUT = V_SS to V_CC, V_CC = V_CCmax
CE# = V_IL, OE# = V_IH, WE#
= V_IH, burst length = 8
54 MHz
66 MHz
80 MHz
I_CCB
V_CC Active burst Read Current
CE# = V_IL, OE# = V_IH, WE#
= V_IH, burst length = 16
CE# = V_IL, OE# = V_IH, WE#
= V_IH, burst length = 32
54 MHz
66 MHz
80 MHz
54 MHz
66 MHz
80 MHz
CE# = V_IL, OE# = V_IH, WE#
= V_IH, burst length =
Continuous
54 MHz
66 MHz
80 MHz
I_IO1
I_CC1
V_IO Non-active Output
V_CC Active Asynchronous
Read Current (4)
OE# = V_IH
CE# = V_IL, OE# = V_IH, WE#
= V_IH
10 MHz
5 MHz
1 MHz
I_CC2
V_CC Active Write Current (5)
I_CC3
I_CC4
I_CC5
V_CC Standby Current (6, 7)
V_CC Reset Current (7)
V_CC Active Current
(Read While Write) (7)
CE# = V_IL, OE# = V_IH, ACC
= V_IH
CE# = RESET# =
V_CC ± 0.2 V
RESET# = V_IL, CLK = V_IL
V_ACC
V_CC
V_ACC
V_CC
CE# = V_IL, OE# = V_IH, ACC = V_IH @
5 MHz
I_CC6
I_ACC
V_IL
V_IH
V_OL
V_OH
V_HH
V_LKO
V_CC Sleep Current (7)
CE# = V_IL, OE# = V_IH
Accelerated Program Current (8)
CE# = V_IL, OE# = V_IH,
V_ACC = 9.5 V
V_ACC
V_CC
Input Low Voltage
V_IO = 1.8 V
Input High Voltage
V_IO = 1.8 V
Output Low Voltage
I_OL = 100 µA, V_CC = V_{CC min} = V_IO
Output High Voltage
I_OH = –100 µA, V_CC = V_{CC min} = V_IO
Voltage for Accelerated Program
Low V_CC Lock-out Voltage
Min
–0.5
V_IO – 0.4
V_IO – 0.1
8.5
1.0
Typ
Max
±1
±1
27
54
28
60
30
66
28
48
30
54
32
60
29
42
32
48
34
54
32
36
35
42
38
48
20
30
27
36
13
18
3
4
1
5
19
52.5
1
5
20
40
70
150
50
60
2
40
6
20
14
20
0.4
V_IO + 0.4
0.1
9.5
1.4
Notes:
1. Maximum I_CC specifications are tested with V_CC = V_CCmax.
2. V_CC= V_IO.
3. CE# must be set high when measuring the RDY pin.
4. The I_CC current listed is typically less than 3 mA/MHz, with OE# at V_IH.
5. I_CC active while Embedded Erase or Embedded Program is in progress.
6. Device enters automatic sleep mode when addresses are stable for t_ACC + 20 ns.
Typical sleep mode current is equal to I_CC3.
7. V_IH = V_CC ± 0.2 V and V_IL > –0.1 V.
8. Total current during accelerated programming is the sum of V_ACC and V_CC
currents.
9. V_ACC = V_HH on ACC input.
10.The content in this document is Advance information for the S29WS064N and
S29WS128N. Content in this document is Preliminary for the S29W256N.
Unit
µA
µA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
µA
mA
mA
mA
µA
mA
µA
µA
µA
mA
µA
mA
mA
V
V
V
V
V
V
January 25, 2005 S29WS-N_00_G0
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