S29AL032D Datasheet, PDF (64/69 Pages) SPANSION – 32 Megabit CMOS 3.0 Volt-only Flash Memory

Advance Information
Erase and Programming Performance
Parameter
Sector Erase Time
Chip Erase Time
Byte Programming Time
Word Programming Time
Accelerated Byte/Word Programming
Time
Chip Programming Time
(Note 3)
Byte Mode
Word Mode
Typ (Note 1)
0.7
45
9
11
7
36
24
Max (Note 2)
10
300
360
210
108
72
Unit
s
s
µs
µs
µs
s
s
Comments
Excludes 00h programming
prior to erasure (Note 4)
Excludes system level
overhead (Note 5)
Notes:
1. Typical program and erase times assume the following conditions: 25°C, V_CC = 3.0 V, 100,000 cycles, checkerboard
data pattern.
2. Under worst case conditions of 90°C, V_CC = 2.7 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most
bytes program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program
command. See Table 17 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 100,000 cycles per sector.
TSOP and BGA Pin Capacitance
Parameter
Symbol
Parameter Description
C_IN
Input Capacitance
Test Setup
V_IN = 0
C_OUT
Output Capacitance
V_OUT = 0
C_IN2
Control Pin Capacitance
Notes:
1. Sampled, not 100% tested.
2. Test conditions T_A = 25°C, f = 1.0 MHz.
V_IN = 0
Package
TSOP
BGA
TSOP
BGA
TSOP
BGA
Typ Max Unit
6
7.5
pF
4.2 5.0
pF
8.5
12
pF
5.4 6.5
pF
7.5
9
pF
3.9 4.7
pF
62
S29AL032D
S29AL032D_00_A3 June 13, 2005