AM29LV033MU_06 Datasheet, PDF (52/61 Pages) SPANSION – 32 Megabit (4 M x 8-Bit) MirrorBit™ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O™ Control

DATA SHEET
AC CHARACTERISTICS
Alternate CE# Controlled Erase and Program Operations
Parameter
Speed Options
JEDEC
Std. Description
101, 112, 120,
90R 101R 112R 120R Unit
t_AVAV
t_AVWL
t_ELAX
t_DVEH
t_EHDX
t_GHEL
t_WC
t_AS
t_AH
t_DS
t_DH
t_GHEL
Write Cycle Time (Note 1)
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
90
100 110 120 ns
Min
0
ns
Min
45
ns
Min
45
ns
Min
0
ns
Min
0
ns
t_WLEL
t_WS WE# Setup Time
Min
t_EHWH
t_WH WE# Hold Time
Min
t_ELEH
t_CP
CE# Pulse Width
Min
t_EHEL
t_CPH CE# Pulse Width High
Min
Write Buffer Program Operation
(Notes 2, 3)
Typ
0
ns
0
ns
45
ns
30
ns
240
µs
Effective Write Buffer Program Operation,
Per Byte (Notes 2, 4)
Typ
7.5
µs
t_WHWH1
t_WHWH1 Accelerated Effective Write Buffer Program
Operation, Per Byte (Notes 2, 4)
Typ
6.25
µs
Single Byte Program (Notes 2, 5)
Typ
60
µs
Accelerated Single Byte Programming
Operation (Note 2, 5)
Typ
54
µs
t_WHWH2
t_WHWH2 Sector Erase Operation (Note 2)
Typ
t_RH
RESET# High Time Before Write (Note 1)
Min
t_POLL
Program Valid before Status Polling
(Note 6)
Max
0.4
sec
50
ns
4
µs
Notes:
1. Not 100% tested.
2. See the “Erase And Programming Performance” section for more information. Write buffer program is typical per word.
3. For 1–32 bytes programmed.
4. Effective write buffer specification is based upon a 32-byte write buffer operation.
5. Byte programming specification is based upon a single byte programming operation not utilizing the write buffer.
6. When using the program suspend/resume feature, if the suspend command is issued within t_POLL, t_POLL must be fully re-applied
upon resuming the programming operation. If the suspend command is issued after t_POLL, t_POLL is not required again prior to
reading the status bits upon resuming.
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Am29LV033MU
September 12, 2006