S29JL032J70TFI420 Datasheet, PDF (51/63 Pages) SPANSION – 32 Megabit (4M x 8-Bit/2M x 16-Bit) CMOS 3.0 Volt-Only, Simultaneous Read/Write Flash Memory

Data Sheet
17.4
Erase and Program Operations
Parameter
JEDEC
Std
Description
t_AVAV
t_AVWL
t_WLAX
t_WC
t_AS
t_ASO
t_AH
t_AHT
Write Cycle Time (Note 1)
Address Setup Time
Address Setup Time to OE# low during toggle bit polling
Address Hold Time
Address Hold Time From CE# or OE# high
during toggle bit polling
t_DVWH
t_WHDX
t_GHWL
t_DS
t_DH
t_OEPH
t_GHWL
Data Setup Time
Data Hold Time
Output Enable High during toggle bit polling
Read Recovery Time Before Write
(OE# High to WE# Low)
t_ELWL
t_WHEH
t_WLWH
t_WHDL
t_WHWH1
t_CS
t_CH
t_WP
t_WPH
t_SR/W
CE# Setup Time
CE# Hold Time
Write Pulse Width
Write Pulse Width High
Latency Between Read and Write Operations
t_WHWH1 Programming Operation (Note 2)
Byte
Word
t_WHWH1
t_WHWH1
Accelerated Programming Operation,
Byte or Word (Note 2)
t_WHWH2
t_WHWH2
t_VCS
t_RB
t_BUSY
t_ESL
Sector Erase Operation (Note 2)
V_CC Setup Time (Note 1)
Write Recovery Time from RY/BY#
Program/Erase Valid to RY/BY# Delay
Erase Suspend Latency
Notes:
1. Not 100% tested.
2. See Erase and Programming Performance on page 58 for more information.
Speed Options
60
70
Unit
Min
60
70
ns
Min
0
ns
Min
12
ns
Min
35
35
ns
Min
0
ns
Min
35
40
ns
Min
0
ns
Min
20
ns
Min
0
ns
Min
0
ns
Min
0
ns
Min
25
30
ns
Min
25
30
ns
Min
0
ns
Typ
6
µs
Typ
6
Typ
4
µs
Typ
0.5
sec
Min
50
µs
Min
0
ns
Max
90
ns
Max
35
µs
December 16, 2011 S29JL032J_00_06
S29JL032J
51