MBM29SL800TE-90 Datasheet, PDF (42/52 Pages) SPANSION – FLASH MEMORY CMOS 8 M (1 M X 8/512 K X 16) BIT

MBM29SL800TE/BE-90/10
Embedded Algorithm^TM
Start
Write Erase
Command Sequence
(See Below)
Data Polling
No
Data = FFh
?
Yes
Erasure Completed
Embedded
Erase
Algorithm
in progress
Individual Sector/Multiple Sector
Chip Erase Command Sequence
Erase Command Sequence
(Address/Command):
(Address/Command):
555h/AAh
555h/AAh
2AAh/55h
2AAh/55h
555h/80h
555h/80h
555h/AAh
555h/AAh
2AAh/55h
555h/10h
2AAh/55h
Sector Address
/30h
Sector Address
/30h
Sector Address
/30h
Additional sector
erase commands
are optional.
Note : The sequence is applied for × 16 mode.
The addresses differ from × 8 mode.
Embedded Erase^TM Algorithm
42